DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  ESD Protected Up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. Green Device (Note 3)  For au

文件：459.12 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：62；Package：U-DFN2020-6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  ESD Protected Up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. Green Device (Note 3)  For au

文件：459.12 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：62；Package：U-DFN2020-6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  ESD Protected Up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. Green Device (Note 3)  For au

文件：459.12 Kbytes 页数：8 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Diodes

美台半导体