DME2333-000中文资料Beam-Lead Single N-Type数据手册Skyworks规格书

描述 Description

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.

特性 Features

• Low 1/f noise
• Epoxy and hermetically sealed packages
• SPC controlled wafer fabrication

应用 Application

• Surveillance Systems
• Radar
• Electronic Warfare
• Avionics

简介

DME2333-000属于分立半导体产品的二极管-射频。由Skyworks制造生产的DME2333-000二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。