Gallium Arsenide Schottky Rectifier

Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Features GaAs Schottky Diode with Enhanced Barrier Height: • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junction

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Gallium Arsenide Schottky Rectifier

Littelfuse

力特

Package：ISOPLUS220™；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 600V 11A

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HiPerDynFREDTM Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low cathode to tab capacitance (

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HiPerFREDTM Epitaxial Diode with soft recovery

Features • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour Applications • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode po

文件：48.41 Kbytes 页数：2 Pages

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High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

Low Loss and Soft Recovery High Performance Fast Recovery Diode Single Diode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated

文件：107.53 Kbytes 页数：4 Pages

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