Dual N-Channel Enhancement MOSFET

Nanxin

南芯微

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Mount height 1.1mm. • Composite type, facilitating high-density mounting. • Drain common specifications.

文件：57.39 Kbytes 页数：4 Pages

SANYO

三洋

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz

文件：39.58 Kbytes 页数：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

包装：散装 类别：工具 钳子 描述：IRONWORKER'S REBAR PLIERS, LEFT

KLEIN

凯能