D2013

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfrom1MHzto2

D2013UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfrom1MHzto2

D2013UK

Gold metallised multi-purpose silicon DMOS RF FET; •Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum\n;

DMN2013UFDE

20VN-CHANNELENHANCEMENTMODEMOSFET

DMN2013UFDEQ

20VN-CHANNELENHANCEMENTMODEMOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2013UFDEQissuitableforautomotive

DMN2013UFDEWQ

20VN-CHANNELENHANCEMENTMODEMOSFET

Features 0.6mmProfile–IdealforLowProfileApplications LowGateThresholdVoltage ESDProtectedGate AdditionalTin-PlatedonSidewallPadsforOpticalSolder Inspection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3