Si NPN TRANSISTOR

DESCRIPTION AND FEATURES 1. Collector-Emitter voltage: BVCBO= 60V 2. Collector current up to 3A 3. High hFElinearity

文件：24.28 Kbytes 页数：1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Audio Frequency Power Amplifier Applications

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TOSHIBA

东芝

METAL GATE RF SILICON FET

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SEME-LAB

Seme LAB

丝印：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.05054 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D2012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07604 Mbytes 页数：12 Pages

Infineon

英飞凌

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

Power MOSFET

NIKO-SEM

尼克森

Power MOSFET

NIKO-SEM

尼克森