D2010

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W–28V–1GHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIO

D2010

Intrinsically Safe Analog-Temperature Multiplexer DIN-Rail Model D2010M

Generaldescription: D2000MseriesIntrinsicallySafeMultiplexingSystemconsistsofonetofour Analog-TemperatureMultiplexerunitsmodelD2010M,uptotwelveExpanderunits modelD2011M,oruptofourDigitalMultiplexerunitsmodelD2030M,mountedin HazardousArea/HazardousLocationsZon

D2010

电流反馈型相位控制电路; ·全波电流感应\n·主电源可调\n·软启动\n·程控电流大小，防止过流及过高输出\n·电压与电流同步\n·自动触发开关\n·内部电压监控\n·电流要求：≤3mA\n·触发脉冲典型值：125mA\n·温度补偿基准电压\n·封装形式：DIP16、SOP16;

D2010是一块相位控制集成电路，采用双级工艺。具有负载电流保护、软启动等功能。广泛应用于机床马达的控制。\n

D2010M

Intrinsically Safe Analog-Temperature Multiplexer DIN-Rail Model D2010M

Generaldescription: D2000MseriesIntrinsicallySafeMultiplexingSystemconsistsofonetofour Analog-TemperatureMultiplexerunitsmodelD2010M,uptotwelveExpanderunits modelD2011M,oruptofourDigitalMultiplexerunitsmodelD2030M,mountedin HazardousArea/HazardousLocationsZon

D2010UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W–28V–1GHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIO

D2010UK

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET; •Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum\n;

D2010UK

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET; •Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum\n;