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DMN1250UFEL

N-CHANNELENHANCEMENTMODEMOSFET

DIODESDiodes Incorporated

美台半导体

DS1250AB

4096kNonvolatileSRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250AB

4096kNonvolatileSRAM

MaximMaxim Integrated Products

美信美信半导体

DS1250BL

4096KNonvolatileSRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250BL

4096KNonvolatileSRAM

MaximMaxim Integrated Products

美信美信半导体

DS1250W

3.3V4096kNonvolatileSRAM

FEATURES 10yearsminimumdataretentionintheabsenceofexternalpower Dataisautomaticallyprotectedduringpowerloss Replaces512kx8volatilestaticRAM,EEPROMorFlashmemory Unlimitedwritecycles Low-powerCMOS Readandwriteaccesstimesasfastas150ns

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250W

3.3V4096kNonvolatileSRAM

MaximMaxim Integrated Products

美信美信半导体

DS1250Y

4096kNonvolatileSRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亚德诺亚德诺半导体

DS1250YL

4096KNonvolatileSRAM

MaximMaxim Integrated Products

美信美信半导体

DTR-1250-MM

GigabitEthernet850nmVCSELTransceivers

OPLINK

OPLINK Communications Inc.

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