首页 >CZTA5551TR>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR | DCCOM Dc Components | DCCOM | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an | DIODES Diodes Incorporated | DIODES | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
Plastic-EncapsulateTransistors Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an | DIODES Diodes Incorporated | DIODES | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
Plastic-EncapsulateTransistors Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | DCCOM Dc Components | DCCOM | ||
160VNPNTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
NPNSURFACEMOUNTTRANSISTOR Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti | DIODES Diodes Incorporated | DIODES | ||
160VNPNVOLTAGETRANSISTORINSOT223 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain | DIODES Diodes Incorporated | DIODES | ||
HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
Dual-ChipNPNGeneralPurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Dual-ChipNPNGeneral-PurposeAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FAIRCHILDSmallSignalTransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneralPurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneral-PurposeAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CENTRAL |
24+ |
SOT-223 |
5000 |
全现原装公司现货 |
询价 | ||
CENTRAL |
24+ |
SOT-223 |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CENTRAL |
22+ |
SOT223-3L |
25320 |
原装正品现货 |
询价 | ||
Central |
2020+ |
SOT-223 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
CENTRAL |
22+ |
SOT223 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
CENTRAL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
CENTRAL |
2021+ |
SOT-223 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
CENTRAL |
23+ |
SOT-223 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
优势Centr |
SOT223 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
CENTRAL |
23+ |
SOT-223 |
201990 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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