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DMBT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551-TP

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DXT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

DCCOM

Dc Components

DXT5551

160VNPNTRANSISTOR

DIODES

Diodes Incorporated

DZT5551

NPNSURFACEMOUNTTRANSISTOR

Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti

DIODES

Diodes Incorporated

DZT5551Q

160VNPNVOLTAGETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain

DIODES

Diodes Incorporated

E5551

HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

FFB5551

Dual-ChipNPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FFB5551

Dual-ChipNPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

FAIRCHILDSmallSignalTransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
CENTRAL
24+
SOT-223
5000
全现原装公司现货
询价
CENTRAL
24+
SOT-223
90000
进口原装现货假一罚十价格合理
询价
CENTRAL
22+
SOT223-3L
25320
原装正品现货
询价
Central
2020+
SOT-223
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
CENTRAL
22+
SOT223
20000
保证原装正品,假一陪十
询价
CENTRAL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CENTRAL
2021+
SOT-223
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CENTRAL
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
优势Centr
SOT223
22+
6000
十年配单,只做原装
询价
CENTRAL
23+
SOT-223
201990
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多CZTA5551TR供应商 更新时间2024-9-21 10:20:00