CY7C1320BV18-200BZC集成电路（IC）的存储器规格书PDF中文资料

Features

• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

• 300-MHz clock for high bandwidth

• 2-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–VDD)

• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

• Offered in both lead-free and non lead-free packages

• JTAG 1149.1-compatible test access port

• Delay Lock Loop (DLL) for accurate data placement