CY14V101LA

1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

CY14V101LA-BA25XI

1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

CY14V101LA-BA25XIT

1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

CY14V101LA-BA45XI

1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

CY14V101LA-BA45XIT

1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

CY14V101LA-BA25XIT

包装：卷带（TR） 封装/外壳：48-TFBGA 类别：集成电路（IC） 存储器 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA

CY14V101LA-BA45XI

包装：卷带（TR） 封装/外壳：48-TFBGA 类别：集成电路（IC） 存储器 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA

CY14V101LA-BA45XIT

包装：托盘 封装/外壳：48-TFBGA 类别：集成电路（IC） 存储器 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA

CY14V101NA

1-Mbit(128Kx8/64Kx16)nvSRAMInfiniteread,write,andrecallcycles

CY14V101PS

1-Mbit(128K횞8)QuadSPInvSRAMwithRealTimeClock

CY14V101QS

1-Mbit(128K횞8)QuadSPInvSRAM

TNR14V101K

METALOXIDEVARISTORSTNRTM

◆FEATURES ●Largesurgecapability(thesurgecurrentratingsofTNRVseries,by8/20μs,areabouttwo timeslargerthanTNRGseries). ●Largeenergycapability(1.5timelargerthanTNRGseries). ●OneranksmallerTNRVhassamepeakcurrentasTNRG. ●Excellentvoltagenon-linearcoeffici