CXD2570Q

1-Bit AD/DA Converter For Audio Application

Description TheHI2570,CXD2570isa1-bitstereoAD/DAconverterwhichusesa2nd-order∆∑systemnoiseshaper.ThisLSIisespeciallysuitedforsamplingfrequencybetween8kHzand32kHz. Features •Two-ChannelAD/DAConvertersandTheirEachDecimationandOversamplingDigitalFilterinaSi

D2570

D2570,D2526,D2555Wavelength-SelectedDirectModulatedIsolatedDFBLaserModule

Description TheDirectModulatedIsolatedDFBLaserModulecontainsaninternallycooled,InGaAs,MQW,distributed-feedback(DFB)laserdesignedfor1.5µmapplications. Features ■ITUwavelengthsavailablefrom1528.77nm—1610.06nm ■SONET/SDHcompatibleuptoOC-48/STM-16 ■Tem

DW2570

CONTENTS

EUP2570

1MHzBoostRegulatorwith18VIntegratedFETSwitchinTinySOT-23

FDB2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

FDB2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesigned specificallyforswitchingontheprimarysideinthe isolatedDC/DCconverterapplication.Anyapplication requiringa150VMOSFETswithlowon-resistanceand fastswitchingwillbenefit. TheseMOSFETsfeaturefastersw

FDD2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •4.7A,150V.RDS(ON)=80mΩ@VGS=10VRDS(ON)=90mΩ@VGS=6V •Lowgatecharge

FDD2570

N-channelEnhancementModePowerMOSFET

Features VDS=150V,ID=20A RDS(ON)

FDD2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDP2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon