HLDD6P10

P-ChannelEnhancementModePowerMOSFET

HLDD6P10

P-ChannelEnhancementModePowerMOSFET

MTD6P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-6A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

MTD6P10E

P?묬hannelDPAKPowerMOSFET

MTD6P10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.66OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MTD6P10EG

P?묬hannelDPAKPowerMOSFET

RFM6P10

PCHANNELENHANCEMENTMODEPOWERFIELDEFFECTTRANSISTORS

[GESOLIDSTATE]

RFP6P10

PCHANNELENHANCEMENTMODEPOWERFIELDEFFECTTRANSISTORS

[GESOLIDSTATE]

RFP6P10

-6A,-80Vand-100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforhighspeedapplicationssuchasswitchingregulators,switchingconvertors,relaydrivers,anddriversforhighpowerbipolarswitchingtransistors. FormerlydevelopmentaltypeTA09046. Features