DXT651Q

60VNPNLOWSATURATIONPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEO>60V •IC=3AHighContinuousCollectorCurrent •ICMupto6APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DZT651

LOWVCE(SAT)NPNSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DZT751) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

ELM651DA

CC/CVMode36Vstepdown5ADC/DCconverter

EN651

10.0ASingle-PhaseBridgeRectifier

FX651

SPMandSecuritySubsystem

FXT651

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *60VoltVCEO *2Ampscontinuouscurrent *Lowsaturationvoltage *Ptot=1Watt

FZT651

SOT223NPNSILICONPLANAR

Features •BVCEO>60V •MaximumcontinuouscurrentIC=3A •LowSaturationVoltage •ComplementaryPNPType–FZT751 •Lead-FreeFinish;RoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPcap

FZT651

NPNSiliconPlanarHighPerformanceTransistors

Features ●60VoltVCEO. ●3Ampcontinuouscurrent. ●Lowsaturationvoltage.

FZT651

NPNSILICONPLANARHIGHPERFORMANCETRANSISTORS

FEATURES *60VoltVCEO *3Ampcontinuouscurrent *Lowsaturationvoltage

FZT651Q

60VNPNHIGHPERFORMANCETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEO>60V •IC=3AHighContinuousCurrent •ICM=6APeakPulseCurrent •LowSaturationVoltageVCE(sat)