丝印：CSD18510KCS；Package：TO-220；CSD18510KCS 40V N-Channel NexFETTM Power MOSFET

1 Features • Low Qg and Qgd • Low RDS(ON) • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 1.4mΩ, TO-220 Ne

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TI

德州仪器

CSD18510KTT 40-V N-Channel NexFET Power MOSFET

文件：413.74 Kbytes 页数：13 Pages

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德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

CSD18510KTT 40V N-Channel NexFETTM Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 1.4mΩ, D2PAK (TO-263) NexF

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TI

德州仪器