CS150N03A8中文资料华润微电子数据手册PDF规格书

General Description：

CS150N03 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-220AB, which accords with the RoHS

standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤3.5 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.