IGBT SIP MODULE

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

文件：269.06 Kbytes 页数：10 Pages

IRF

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

DESCRIPTION The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

文件：279.86 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

IGBT SIP MODULE Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

文件：453.55 Kbytes 页数：8 Pages

IRF

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

文件：450.41 Kbytes 页数：8 Pages

IRF

IGBT SIP MODULE Short Circuit Rated Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

文件：450.36 Kbytes 页数：8 Pages

IRF

IGBT SIP MODULE Ultra-Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

文件：453.41 Kbytes 页数：8 Pages

IRF

IGBT SIP MODULE

文件：176.99 Kbytes 页数：10 Pages

IRF

IGBT SIP MODULE

文件：275.47 Kbytes 页数：10 Pages

IRF

IGBT SIP Module (Ultrafast IGBT)

文件：278.25 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

·Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 µs at 125 °C, VGE = 15 V\n·Fully isolated printed circuit board mount package\n·Switching-loss rating includes all “tail” losses;

Vishay

威世