| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CPV363 | IGBT SIP MODULE Fast IGBT Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow 文件：453.55 Kbytes 页数：8 Pages | IRF | IRF | |
CPV363 | IGBT SIP MODULE Fast IGBT | Infineon 英飞凌 | Infineon | |
IGBT SIP MODULE Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow 文件：269.06 Kbytes 页数：10 Pages | IRF | IRF | ||
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) DESCRIPTION The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. 文件：279.86 Kbytes 页数：11 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
IGBT SIP MODULE Fast IGBT Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow 文件：453.55 Kbytes 页数：8 Pages | IRF | IRF | ||
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow 文件：450.41 Kbytes 页数：8 Pages | IRF | IRF | ||
IGBT SIP MODULE Short Circuit Rated Fast IGBT Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow 文件：450.36 Kbytes 页数：8 Pages | IRF | IRF | ||
IGBT SIP MODULE Ultra-Fast IGBT Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow 文件：453.41 Kbytes 页数：8 Pages | IRF | IRF | ||
IGBT SIP MODULE 文件：176.99 Kbytes 页数：10 Pages | IRF | IRF | ||
IGBT SIP MODULE 文件：275.47 Kbytes 页数：10 Pages | IRF | IRF |
技术参数
- 配置：
三相反相器
- 电压 - 集射极击穿（最大值）：
600V
- 电流 - 集电极（Ic）（最大值）：
16A
- 功率 - 最大值：
36W
- 不同 Vge，Ic 时的 Vce（on）：
1.63V @ 15V，16A
- 电流 - 集电极截止（最大值）：
250µA
- 不同 Vce 时的输入电容（Cies）：
1.1nF @ 30V
- 输入：
标准
- NTC 热敏电阻：
无
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
19-SIP（13 引线），IMS-2
- 供应商器件封装：
IMS-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三菱 |
100 |
原装现货,价格优惠 |
询价 | ||||
IR |
23+ |
模块 |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
IRF |
24+ |
模块 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
IR |
24+ |
模块 |
3500 |
原装现货,可开13%税票 |
询价 | ||
IR |
23+ |
SIP模块 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
25+ |
PLCC |
18000 |
原厂直接发货进口原装 |
询价 | ||
IOR |
24+ |
1 |
询价 | ||||
12+ |
2500 |
原装现货/特价 |
询价 | ||||
IR |
24+ |
155 |
现货供应 |
询价 | |||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 |
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