Silicon Carbide Power MOSFETC2M Planar MOSFET TechnologyN-Channel Enhancement Mode

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new ·1700V of blocking voltage with lowRDS(on)\n·High-speed switching with low capacitances\n·Avalanche ruggedness\n·Fast intrinsic diode with low reverse recovery (Qrr) ;

Wolfspeed(CREE)

Silicon Carbide Power MOSFET C2M MOSFET Technology

文件：988.78 Kbytes 页数：7 Pages

Cree

科锐

Silicon Carbide Power MOSFET

文件：624.82 Kbytes 页数：7 Pages

Cree

科锐