CEB35P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-35A,RDS(ON)=36mΩ@VGS=-10V. RDS(ON)=57mΩ@VGS=-5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEP35P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-35A,RDS(ON)=36mΩ@VGS=-10V. RDS(ON)=57mΩ@VGS=-5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

HM35P03

P-ChannelEnhancementModePowerMOSFET

HM35P03D

P-ChannelEnhancementModePowerMOSFET

PJD35P03

30VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-8A

SPR35P03

P-ChannelEnhancementModePowerMOSFET

SSD35P03

P-ChEnhancementModePowerMOSFET