Power Transistor PNP - Low Saturation Transistor Chip

PROCESS DETAILS ​​​​​​​ Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalizati

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SURFACE MOUNT LOW VCE(SAT) PNP POWER TRANSISTOR

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Power Transistor PNP - Low Saturation Transistor Chip

PROCESS DETAILS\nProcess                      EPITAXIAL PLANAR\nDie Size                     41.3 x 41.3 MILS\nDie Thickness                         9.0 MILS\nBase Bonding Pad Area        9.5 x 9.2 MILS\nEmitter Bonding Pad Area      12.8 x 10.2 MILS\nTop Side Metalization              Al - 30,000Å\

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SURFACE MOUNT LOW VCE SAT PNP POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT7090L is a Low VCE(SAT) PNP Transistor in a six lead Power SOT-26 surface mount package designed for LAN cards, motor control, power management, strobe flash units and DC-DC converters for mobile systems. MARKING CODE: X709L

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Power Transistor PNP - Low Saturation Transistor Chip

PROCESS DETAILS ​​​​​​​ Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalizati

文件：216.99 Kbytes 页数：2 Pages

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SURFACE MOUNT LOW VCE(SAT) PNP POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT7090L is a Low VCE(SAT) PNP Transistor in a Power SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN cards, motor control, power management and strobe flash units. MARKING: FULL PART NUMBER

文件：110.77 Kbytes 页数：2 Pages

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