25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

文件：2.31481 Mbytes 页数：14 Pages

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25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and high

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25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier

文件：439.88 Kbytes 页数：7 Pages

Cree

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25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

文件：2.31481 Mbytes 页数：14 Pages

Cree

科锐

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

文件：2.31481 Mbytes 页数：14 Pages

Cree

科锐

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

文件：2.31481 Mbytes 页数：14 Pages

Cree

科锐

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

文件：2.31481 Mbytes 页数：14 Pages

Cree

科锐

25 W, 8.0 – 11.0 GHz, GaN MMIC Power Amplifier

28 dB Small Signal Gain 35 W Typical PSAT Operation up to 28 V High Breakdown Voltage High Temperature Operation • 28 dB Small Signal Gain\n•35 W Typical PSAT\n•Operation up to 28 V\n•High Breakdown Voltage\n•High Temperature Operation;

MACOM

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

28 dB Small Signal Gain 35 W Typical PSAT Operation up to 28 V High Breakdown Voltage High Temperature Operation • 28 dB Small Signal Gain\n•35 W Typical PSAT\n•Operation up to 28 V\n•High Breakdown Voltage\n•High Temperature Operation;

MACOM