Infrared Emitting Diodes(GaAlAs)

文件：190.22 Kbytes 页数：2 Pages

KODENSHI

可天士

JCDMA Receive Filter

文件：108.68 Kbytes 页数：1 Pages

APITECH

GaAs MMIC

GaAs MMIC • Linear Mixer with integrated LO-Buffer • High Input-IP3 of typical 17.5 dBm • Very low LO-Power demand of typ. 0 dBm • Suited for Up- and Down-Conversion • Wide LO-Frequency Range 2.5 GHz • Wide LO-Level Range • Single ended Ports • RF- and IF-Port Impedance 50 Ω • Operating

文件：139.58 Kbytes 页数：7 Pages

Infineon

英飞凌

Power Transistor NPN - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 99 MILS Die Thickness 12.5 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 48 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Cr/Ni/Ag - 16,000Å

文件：218.46 Kbytes 页数：2 Pages

Central