首页 >CJT04P10TR>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
P-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-41package •400Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Lowincrementalsurgeresistance •Excellentclampingcapability | MDEMDE semiconductor MDE半导体MDE半导体公司 | MDE | ||
TransZorbTransientVoltageSuppressors | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
TransientVoltageSuppressor BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR | MDEMDE semiconductor MDE半导体MDE半导体公司 | MDE | ||
TransientVoltageSuppressor BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
MINITYPELEDLAMPS | DBLECTRODB Lectro Inc 迪贝电子 | DBLECTRO | ||
TRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V | EIC EIC discrete Semiconductors | EIC | ||
400WattsAxialLeadedTransientVoltageSuppressor VOLTAGERANGE:5.8-376VPOWER:400Watts Features ●ConstructedwithGlassPassivatedDie ●UniandBidirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR | MDEMDE semiconductor MDE半导体MDE半导体公司 | MDE | ||
TransientVoltageSuppressor BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellen | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-41package •400Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Lowincrementalsurgeresistance •Excellentclampingcapability | MDEMDE semiconductor MDE半导体MDE半导体公司 | MDE | ||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ♦Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ♦Glasspassivatedjunction ♦400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ♦Excellentclampingc | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
MINITYPELEDLAMPS | DBLECTRODB Lectro Inc 迪贝电子 | DBLECTRO | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSORVOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae VOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae FEATURES ■Plasticpackage ■GlasspassivatedchipjunctioninDO-41Package ■400Wsurgecapabilityat10/1000µswavefromExcellentclampingcapability ■Lowzenerimpedance ■Fastresponsetime:typicallylesst | DBLECTRODB Lectro Inc 迪贝电子 | DBLECTRO | ||
SIPMOS짰Power-TransistorFeaturesP-ChannelEnhancementmode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SIPMOS짰Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TE |
20+ |
电阻器 |
67 |
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