CHM51A3PAPT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE30VoltsCURRENT35Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CEB51A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,48A,RDS(ON)=16.5mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CED51A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,35A,RDS(ON)=14mΩ(typ)@VGS=10V. RDS(ON)=21mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP51A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,48A,RDS(ON)=16.5mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEU51A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,35A,RDS(ON)=14mΩ(typ)@VGS=10V. RDS(ON)=21mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM51A3ZPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT9.5Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.