Description

The CHK015A-SMA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and telecommunication

The CHK015A-SMA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. The CHK015A-SMA is available in a ceramic-metal flange power package providing low parasitic and low thermal resistance.

Main Features

■ Wide band capability: up to 6GHz

■ Pulsed and CW operating modes

■ High power: > 15W

■ High Efficiency: up to 70

■ DC bias: VDS = 50V @ ID_Q = 100mA

■ MTTF > 106 hours @ Tj = 200°C

■ RoHS Flange Ceramic package