CGY0918

GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)

GaAsMMIC ●DualbandGSM/PCNpoweramplifier ●35dBm/34dBmoutputpowerat3.5V ●Twoamplifiersinasinglepackage ●Powerrampcontrol

DS0918

GaAsSP16T

ENA0918

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

MGF0918A

High-powerGaAsFET(smallsignalgainstage)

MGF0918A

L&SBANDGaAsFET

MGF0918A

L&SBANDGaAsFET[SMDnon-matched]

DESCRIPTION TheMGF0918AGaAsFETwithanN-channelschottkyGate,isdesignedforuseUHFbandamplifiers. FEATURES ●Highoutputpower Po=27dBm(TYP.)@f=1.9GHz,Pin=8dBm ●Highpowergain Gp=20dB(TYP.)@f=1.9GHz ●Highpoweraddedefficiency hadd=45(TYP.)@f=1.9GHz,Pin=8dBm ●He

TA0918A

SAWFilter1575.42MHz2MHzBWSMD1.4X1.1mm

XB0918A

ALLDIMENSIONSINMM[INCH]