CGHV31500F-AMP

500W, 2.7 - 3.1 GHz, GaN IMFET

The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.\n; ·650 W Typical Output Power\n·12 dB Power Gain\n·65% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop\n;

CGHV31500F-AMP

500 W, 2700 - 3100 MHz, 50-Ohm Input

CGHV31500F-TB

500W,2700-3100MHz,50-OhmInput

CSM31500

V3typemicroswitches5A,10Aand15A

Productoverview •Rating5A,10Aand15AswitchingS.P.D.T. •Coilspringmechanism •6.3mm(.250),4.8mm(.187)quickconnect, solderandscrewterminals •Button,leverorrolleractuators

PR31500

Poseidonembeddedprocessor

GENERALDESCRIPTION PR31500Processorisasingle-chip,low-cost,integratedembeddedprocessorconsistingofMIPSR3000coreandsystemsupportlogictointerfacewithvarioustypesofdevices. PR31500consistsofaMIPSR3000RISCCPUwith4KBytesofinstructioncachememoryand1KByteofda

PHI