CGHV27100

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

CGHV27100F

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

CGHV27100F-AMP

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

CGHV27100P

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

CGHV27100-TB

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

CGHV27100F

包装：卷带（TR） 封装/外壳：440162 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 50V 440162

BYV27100

2.0ASUPER-FASTGLASSBODYRECTIFIER

Features •HermeticallySealedGlassBodyConstruction •ControlledAvalancheCharacteristics •Super-FastSwitchingforHighEfficiency •HighCurrentCapabilityandLowForwardVoltageDrop •SurgeOverloadRatingto50APeak •LowReverseLeakageCurrent

PM-DB27100

DATABUSINTERFACETRANSFORMERSLOWPROFILESINGLE/DUAL

SGD27100

DCSOLIDSTATERELAY