CEU830A资料datasheet下载供应价格华瑞-114ic电子网

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零件型号	下载订购	功能描述	制造商上传企业
CEU830A	文件：364.89 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
CEU830A	文件：300 bytes Page：1 Pages	N Channel MOSFET	CETChino-Excel Technology 华瑞华瑞股份有限公司
CEU830G	文件：397.5 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 华瑞华瑞股份有限公司
CEU830G	文件：1.45691 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司
CEU830G	文件：557.38 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司

更多CEU830A供应商更新时间2025-8-1 9:05:00