CES2362

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,3A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2362

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

CHM2362PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

D2362

9-INCHWINCHESTERDISKDRIVEMAINTENANCEMANUAL

DA2362-AL

FlybackTransformer

H2362F

Renesas16-BitSingle-ChipMicrocomputerH8SFamily/H8S/2300Series

LEVG2362-PF

BIPOLARTYPELEDLAMPS

LHG2362-PF

BIPOLARTYPELEDLAMPS

LHY2362-PF

BIPOLARTYPELEDLAMPS

LSBKSVG2362

BIPOLARTYPELEDLAMPS