N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：428.79 Kbytes 页数：4 Pages

CET

华瑞

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：1.035329 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 3 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：357.18 Kbytes 页数：3 Pages

CHENMKO

力勤

9-INCH WINCHESTER DISK DRIVE MAINTENANCE MANUAL

文件：1.71412 Mbytes 页数：58 Pages

NEC

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Flyback Transformer

文件：176.41 Kbytes 页数：1 Pages

COILCRAFT