P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：394.76 Kbytes 页数：4 Pages

CET

华瑞

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：1.05083 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.2A, RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead free product is acquired. RDS(ON) = 78mW @VGS = -1.8V.

文件：484.18 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.3A, RDS(ON) = 42mW @VGS = -4.5V. RDS(ON) = 55mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 75mW @VGS = -1.8V.

文件：431.8 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞