P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：254.08 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4.1 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：468.03 Kbytes 页数：3 Pages

CHENMKO

力勤

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

文件：218.38 Kbytes 页数：1 Pages

CML

T-1 3/4 Bi-Pin Base (.125)

文件：220.86 Kbytes 页数：1 Pages

CML