P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-23 package.

文件：371.03 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 75mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：620.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3.9A, RDS(ON) = 52mW @VGS = -4.5V. RDS(ON) = 72mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：438.71 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 3.8 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：276.76 Kbytes 页数：3 Pages

CHENMKO

力勤

P-Channel 20-V(D-S) MOSFET

文件：1.20371 Mbytes 页数：5 Pages

JIANGSU

长电科技