N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：145.53 Kbytes 页数：4 Pages

CET

华瑞

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.85575 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：2.15681 Mbytes 页数：2 Pages

CHENMKO

力勤

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

文件：217.57 Kbytes 页数：1 Pages

CML

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科