N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：162.45 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.4A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 36mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). RoHS compliant. SOT-23 package. Rugged and reliable. ESD Protected 2KV.

文件：655.4 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：408.52 Kbytes 页数：3 Pages

CHENMKO

力勤

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

文件：218.38 Kbytes 页数：1 Pages

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T-1 3/4 Bi-Pin Base (.125)

文件：220.86 Kbytes 页数：1 Pages

CML