N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ● TO-220 & TO-263 package.

文件：949.15 Kbytes 页数：4 Pages

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N Channel Product

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N-Channel Enhancement Mode Field Effect Transistor

文件：434.85 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 36A , RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：893.88 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

文件：415.04 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 36A , RDS(ON) = 15mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 22mW @VGS = 4.5V. Lead free product is acquired.

文件：628.66 Kbytes 页数：4 Pages

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