P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -2.3A, RDS(ON) = 240mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 280mW @VGS = -6V.

文件：445.98 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

GENERAL ELECTRICAL & MECHANICAL SPECIFICATION

文件：328.17 Kbytes 页数：4 Pages

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CK ROTARY SWITCH

FEATURES Standard 30° indexing, 60° and 90° available Moulded 27.5mm diameter Single wafer switch Maximum 12 positions Up to 4 poles per switch Shorting (make before break 30° indexing only) or non-shorting (break before make) Moulded stop or adjustable stops to restrict number of posit

文件：922.87 Kbytes 页数：4 Pages

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Common Mode Chokes - Radial

文件：189.88 Kbytes 页数：1 Pages

CT

Central Technologies