P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant.

文件：793.66 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V.

文件：823.08 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant.

文件：793.66 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -53A, RDS(ON) = 18 mW @V GS = -10V. RDS(ON) = 23 mW @V GS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：969.86 Kbytes 页数：6 Pages

CET-MOS

华瑞