N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 89A, RDS(ON) = 4.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 7.8mW @VGS = 4.5V.

文件：412.42 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 116A, RDS(ON) = 4.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 7.7mW @VGS = 4.5V.

文件：410.98 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 89A, RDS(ON) = 4.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 7.8mW @VGS = 4.5V.

文件：412.42 Kbytes 页数：5 Pages

CET-MOS

华瑞

Surface Mount Oscillator

FEATURES • Size: 5.0 x 3.2 x 1.3 (mm) • Miniature package • Tri-state enable/disable • HCMOS compatible • Tape and reel • IR re-flow • 1.8 V input voltage • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

文件：80.18 Kbytes 页数：3 Pages

VishayVishay Siliconix

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