N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 6.2A, RDS(ON) = 1.25W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

文件：623.7 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：607.32 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：607.32 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25Ω 7.5A 10V CEB08N6A 600V 1.25Ω 7.5A 10V CEF08N6A 600V 1.25Ω 7.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

文件：380.82 Kbytes 页数：4 Pages

CET

华瑞