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CEB80N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件:426.02 Kbytes 页数:4 Pages

CET

华瑞

CEB80N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-220F full-pak for through hole. RoHS compliant.

文件:405.43 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB80N15

N Channel MOSFET

CET

华瑞

CEF80N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 & TO-220F full-pak for through hole.

文件:426.02 Kbytes 页数:4 Pages

CET

华瑞

CEF80N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-220F full-pak for through hole. RoHS compliant.

文件:405.43 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEP80N15

N-Channel MOSFET uses advanced trench technology

文件:1.86036 Mbytes 页数:7 Pages

DOINGTER

杜因特

技术参数

  • BVDSS(V):

    150

  • Rds(on)mΩ@10V:

    19

  • ID(A):

    76

  • Qg(nC)@10V(typ):

    262

  • RθJC(℃/W):

    0.5

  • Pd(W):

    300

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
CET
23+
TO-263
6000
原装正品,支持实单
询价
CET
2018+
SOP/DIPQFP
800
原装假一赔十
询价
CET
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NK/南科功率
2025+
TO-263
986966
国产
询价
CET/華瑞
2511
TO-263
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
CET
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
CET
24+
5000
询价
CET
24+
TO-263
5000
只做原装公司现货
询价
CET
24+
TO263-2
90000
进口原装现货假一罚十价格合理
询价
更多CEB80N15供应商 更新时间2025-10-4 14:02:00