CDCLVP2108EVM

包装：盒 功能：时钟缓冲器 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL MODULE FOR CDCLVP2108

CDCLVP2108RGZR

16LVPECLOutput,High-PerformanceClockBuffer

CDCLVP2108RGZR

16-LVPECLOutput,High-PerformanceClockBuffer

CDCLVP2108RGZT

16-LVPECLOutput,High-PerformanceClockBuffer

CDCLVP2108RGZT

16LVPECLOutput,High-PerformanceClockBuffer

CEC2108E

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,29A,RDS(ON)=13mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=19mW@VGS=2.5V. ESDProtected:2000V. RDS(ON)=27mW@VGS=1.8V.

CEG2108E

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,8.5A,RDS(ON)=14mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. RoHScompliant. RDS(ON)=20mW@VGS=2.5V. RDS(ON)=28mW@VGS=1.8V.

CEM2108

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,9.5A,RDS(ON)=14mΩ@VGS=4.5V. RDS(ON)=20mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CHM2108JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT9.5Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CP2108

SINGLE-CHIPUSB-TO-QUAD-UARTBRIDGE