CDCLVC1310-EVM

包装：盒 功能：时钟缓冲器 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL MODULE FOR CDCLVC1310

CDCLVC1310RHBR

Ten-OutputLow-JitterLow-PowerClockBufferandLevelTranslator

CDCLVC1310RHBR

Ten-OutputLow-JitterLow-PowerClockBuffer

CEB1310S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,85A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEB1310SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,88A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CED1310S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CED1310SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.

CEEH1310

CurrentSenseTransformerType:CEEH>Series>

CEEH1310C

CurrentTransformer

CEM1310SL

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,14A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.