High-Speed CMOS Logic Dual 4-Input NAND Gate

文件：257.1 Kbytes 页数：9 Pages

TI

德州仪器

High-Speed CMOS Logic Dual 4-Input NAND Gate

文件：603.76 Kbytes 页数：14 Pages

TI

德州仪器

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP 14SOIC

TI2

德州仪器

Dual 4-input NAND Gates

Features • High Speed Operation: tpd = 9 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

文件：45.51 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Dual 4-input NAND Gates

Features • High Speed Operation: tpd= 9 ns typ (CL= 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC= 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC(static) = 1 µA max (Ta = 25°C)

文件：91.87 Kbytes 页数：7 Pages

RENESAS

瑞萨

Dual 4-input NAND Gates

Features • High Speed Operation: tpd= 9 ns typ (CL= 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC= 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC(static) = 1 µA max (Ta = 25°C)

文件：91.87 Kbytes 页数：7 Pages

RENESAS

瑞萨