DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

Dual 4-Input NAND Gate

文件：30.05 Kbytes 页数：5 Pages

TI

德州仪器

丝印：CD74ACT20E；Package：PDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CD74ACT20E；Package：PDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

具有 TTL 兼容型 CMOS 输入的 2 通道、4 输入、4.5V 至 5.5V 与非门

The ’ACT20 devices contain two independent 4-input NAND gates. They perform the Boolean function Y = (A • B • C • D)\\ or Y = A\\ + B\\ + C\\ + D\\ in positive logic. • Inputs Are TTL-Voltage Compatible\n• Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption\n• Balanced Propagation Delays\n• ±24-mA Output Drive Current \n• Fanout to 15 F Devices\n \n• SCR-Latchup-Resistant CMOS Process and Circuit Design\n• Exceeds 2-kV ESD Protection Per M;

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes 页数：13 Pages

TI

德州仪器

Dual 4-Input NAND Gate

文件：30.05 Kbytes 页数：5 Pages

TI

德州仪器