可控硅/SCR-单向晶闸管

JSMC

华微电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 16.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 24 mW @VGS = 4.5V.

文件：937.78 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 16.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 24 mW @VGS = 4.5V.

文件：937.78 Kbytes 页数：5 Pages

CET-MOS

华瑞

TUNING FORK CRYSTAL UNIT

文件：602.26 Kbytes 页数：2 Pages

CITIZEN

西铁城电子株式会社