MCR100-8

SensitiveGateSiliconControlledRectifiers

GeneralDescription SensitivetriggeringSCRissuitablefortheapplicationwheregatecurrentlimitedsuchassmallmotorcontrol,gatedriverforlargeSCR,sensinganddetectingcircuits. Features ◆RepetitivePeakOff-StateVoltage:600V ◆R.M.SOn-StateCurrent(IT(RMS)=0.8

MCR100-8

0.8ASENSITIVESCRs

MCR100-8

TO-92Plastic-EncapsulateTransistors(TO-92)

SiliconPlanarPNPNThyristor FEATURES Current-IGT:200µA ITRMS:0.8A VDRM:MCR100-6:400V MCR100-8:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MCR100-8

Blockingvoltageto600V

Description Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurpose switchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlyto microcontrollers,logicintegratedcircuitsandotherlowpowergatetriggercircu

MCR100-8

TO-92Plastic-EncapsulatedTransistors

FEATURES Current-IGT:200µA ITRMS:0.8A VDRM:MCR100-6:400V MCR100-8:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MCR100-8

SCRs

GeneralDescription SensitivetriggeringSCRissuitablefortheapplicationwheregatecurrentlimitedsuchassmallmotorcontrol，EarthleakagecircuitbreakersorGroundFaultCircuitInterrupters(GFCI)，Solidstaterelays，Generalpurposeswitching，Smallengineignition。 Features ◆Repe

MCR100-8

Plastic-EncapsulateThyristors

Application PNPNdevicesdesignedforhighvolume,line-powered consumerapplicationssuchasrelayandlampdrivers, smallmotorcontrols,gatedriversforlargerthyristors, andsensinganddetectioncircuits.

MCR100-8A

SensitiveGate/SiliconControlledRectifiers

MCR100-8A

0.8ASCR

MCR100-8F-B

SiliconPlanarPNPNThyristor

DESCRIPTION Logiclevelsensitivegatetriacintended tobeinterfaceddirectlytomicrocontrollers, logicintegratedcircuits andotherlowpowergatetriggercircuits. FEATURES Blockingvoltageto400V(MCR100-6/F),600V(MCR100-8/F) RMSon-statecurrentto0.8A Generalpurposeswit