CAT24C44VI-T3集成电路（IC）的存储器规格书PDF中文资料

CAT24C44VI-T3属于集成电路（IC）的存储器。由安森美半导体制造生产的CAT24C44VI-T3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

DESCRIPTION

The CAT24C44 Serial NVRAM is a 256-bit nonvolatile memory organized as 16 words x 16 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typically within 1.5µs. The CAT24C44 features unlimited RAM write operations either through external RAM writes or internal recalls from EEPROM. Internal false store protection circuitry prohibits STORE operations when VCC is less than 3.5V (typical) ensuring EEPROM data integrity.

FEATURES

■ Single 5V Supply

■ Infinite EEPROM to RAM Recall

■ CMOS and TTL Compatible I/O

■ Low CMOS Power Consumption:

–Active: 3mA Max.

–Standby: 30µA Max.

■ Power Up/Down Protection

■ 10 Year Data Retention

■ JEDEC Standard Pinouts:

–8-lead DIP

–8-lead SOIC

■ 100,000 Program/Erase Cycles (EEPROM)

■ Auto Recall on Power-up

■ Commercial, Industrial and Automotive Temperature Ranges