1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate VDS 1200 V IDS 450 A System Benef

文件：892.85 Kbytes 页数：9 Pages

WOLFSPEED

CUSTOMER PRODUCT SPECIFICATION SHEET

SPECIFICATIONS l MMCX RIGHT ANGLE PLUG. P/N RFCT-MMCX004-M74 2. RG174 COAXIAL CABLE. COLOR BLACK 3 TNC STRAIGHT BULKHEAD JACK W/0-RING. W/SUS303 STAINLESS STEEL BODY. PATED TO IP67/68. P/N PFCT-TNC019-F74 ENVIRONMENT AL A BULKHEAD MOUNTED CONNECTOR (RFCT -TNC019-F74) RATED TO THE FOLLOWIN

文件：292.27 Kbytes 页数：1 Pages

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CUSTOMER PRODUCT SPECIFICATION SHEET

SPECIFICATIONS l MMCX RIGHT ANGLE PLUG. P/N RFCT-MMCX004-M74 2. RG174 COAXIAL CABLE. COLOR BLACK 3 TNC STRAIGHT BULKHEAD JACK W/0-RING. W/SUS303 STAINLESS STEEL BODY. PATED TO IP67/68. P/N PFCT-TNC019-F74 ENVIRONMENT AL A BULKHEAD MOUNTED CONNECTOR (RFCT -TNC019-F74) RATED TO THE FOLLOWIN

文件：292.27 Kbytes 页数：1 Pages

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CUSTOMER PRODUCT SPECIFICATION SHEET

SPECIFICATIONS l MMCX RIGHT ANGLE PLUG. P/N RFCT-MMCX004-M74 2. RG174 COAXIAL CABLE. COLOR BLACK 3 TNC STRAIGHT BULKHEAD JACK W/0-RING. W/SUS303 STAINLESS STEEL BODY. PATED TO IP67/68. P/N PFCT-TNC019-F74 ENVIRONMENT AL A BULKHEAD MOUNTED CONNECTOR (RFCT -TNC019-F74) RATED TO THE FOLLOWIN

文件：292.27 Kbytes 页数：1 Pages

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1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

文件：893.57 Kbytes 页数：9 Pages

Cree

科锐

XM3 Half-Bridge Power Module Family

High Temperature (175 °C) OperationLow Inductance (6.7 nH) DesignUtilizes Latest 3rd Generation Silicon Carbide MOSFETSIntegrated Temperature Sensor and Kelvin-Drain ConnectionSilicon Nitride Ceramic Substrate and Copper Baseplate • High Temperature (175 °C) Operation\n• Low Inductance (6.7 nH) Design\n• Utilizes Latest 3rd Generation Silicon Carbide MOSFETS\n• Integrated Temperature Sensor and Kelvin-Drain Connection\n• Silicon Nitride Ceramic Substrate and Copper Baseplate;

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